ST7LIT15BF0 STMicroelectronics, ST7LIT15BF0 Datasheet - Page 18

• Manufacturer Part Number: ST7LIT15BF0
• Description: 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI
• Manufacturer: STMicroelectronics

Specifications of ST7LIT15BF0

• Up To 4 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55˚C.
• 128 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55˚C.
• Clock Sources: Internal 1% RC oscillator (on ST7FLITE15B and ST7FLITE19B), crystal/ceramic resonator or external clock
• Five Power Saving Modes: Halt, Active-Halt, Auto Wake-up from Halt, Wait and Slow

ST7LITE1xB
DATA EEPROM (Cont’d)
5.4 POWER SAVING MODES
Wait mode
The DATA EEPROM can enter WAIT mode on ex-
ecution of the WFI instruction of the microcontrol-
ler or when the microcontroller enters Active-HALT
mode.The DATA EEPROM will immediately enter
this mode if there is no programming in progress,
otherwise the DATA EEPROM will finish the cycle
and then enter WAIT mode.
Active-Halt mode
Refer to Wait mode.
Halt mode
The DATA EEPROM immediately enters HALT
mode if the microcontroller executes the HALT in-
struction. Therefore the EEPROM will stop the
function in progress, and data may be corrupted.
Figure 10. Data EEPROM Programming Cycle
18/159
1
INTERNAL
PROGRAMMING
VOLTAGE
DATA LATCHES
WRITE OF
ERASE CYCLE
READ OPERATION NOT POSSIBLE
t
PROG
5.5 ACCESS ERROR HANDLING
If a read access occurs while E2LAT=1, then the
data bus will not be driven.
If a write access occurs while E2LAT=0, then the
data on the bus will not be latched.
If a programming cycle is interrupted (by a RESET
action), the integrity of the data in memory will not
be guaranteed.
5.6 Data EEPROM Read-out Protection
The read-out protection is enabled through an op-
tion bit (see option byte section).
When this option is selected, the programs and
data stored in the EEPROM memory are protected
against read-out (including a re-write protection).
In Flash devices, when this protection is removed
by reprogramming the Option Byte, the entire Pro-
gram memory and EEPROM is first automatically
erased.
Note: Both Program Memory and data EEPROM
are protected using the same option bit.
WRITE CYCLE
READ OPERATION POSSIBLE
PGM
LAT