PF38F5070M0P0B NUMONYX [Numonyx B.V], PF38F5070M0P0B Datasheet - Page 25
PF38F5070M0P0B
Manufacturer Part Number
PF38F5070M0P0B
Description
Numonyx Wireless Flash Memory (W18)
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.PF38F5070M0P0B.pdf
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Numonyx™ Wireless Flash Memory (W18)
Table 12: DC Voltage Characteristics (Sheet 2 of 2)
November 2007
Order Number: 290701-18
Notes:
1.
2.
3.
4.
Symbol
V
V
V
V
ILKOQ
PPLK
LKO
OH
V
V
less.
V
Block erases, programming and lock-bit configurations are inhibited when V
between V
CCQ
IL
PP
can undershoot to –1.0 V for durations of 2 ns or less and V
<= V
Output High
V
V
V
V
= 1.35 V - 1.8V is available on 130 nm devices only.
PP
CC
CC
CCQ
Parameter
Lock-Out
Lock (90nm)
Lock (130nm)
PPLK
Lock
LKOMIN
inhibits erase and program operations. Don’t use V
and V
CCMIN
V
CCQ
, and above V
Min
1.0
0.7
0.9
-
– 0.1
32/64-Mbit
CCMAX
Max
0.4
-
-
-
-
V
CCQ
.
= 1.8 V
V
CCQ
Min
1.0
0.9
-
-
– 0.1
128-Mbit
IH
PPL
can overshoot to V
and V
Max
0.4
-
-
-
-
PPH
CC
outside their valid ranges.
<V
LKO
Unit
, and not guaranteed in the range
V
V
V
V
V
CCQ
+1.0 V for durations of 2 ns or
V
V
I
OH
Test Condition
CC
CCQ
= –100 µA
= V
= V
CC
CCQ
Min
Min
Datasheet
Notes
3
4
25
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