PF38F5070M0P0B NUMONYX [Numonyx B.V], PF38F5070M0P0B Datasheet - Page 77
PF38F5070M0P0B
Manufacturer Part Number
PF38F5070M0P0B
Description
Numonyx Wireless Flash Memory (W18)
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.PF38F5070M0P0B.pdf
(102 pages)
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Numonyx™ Wireless Flash Memory (W18)
Figure 34: Protection Register Locking
13.3
Figure 35: Examples of VPP Power Supply Configurations
Note:
November 2007
Order Number: 290701-18
If the V
CC
VPP Protection
The Numonyx™ Wireless Flash Memory (W18) provides in-system program and erase
at V
12 V programming
feature can also be used to greatly improve factory program performance as explained
in
In addition to the flexible block locking, holding the V
provide absolute hardware write protection of all flash-device blocks. If V
V
Figure
supply can sink adequate current, you can use an appropriately valued resistor.
PPLK
Section 11.3, “Enhanced Factory Program (EFP)” on page
PP1
, program or erase operations result in an error displayed in SR[3]. (See
. For factory programming, it also includes a low-cost, backward-compatible
35.)
• 12 V fast programming
• Absolute write protection with V
• Low voltage and 12 V fast programming
System supply
12 V supply
System supply
12 V supply
≤ 10K Ω
(Note 1)
feature.(Section 11.2, “Factory Programming” on page
0x88
0x85
0x84
0x81
0x80
15 14 13 12 11 10 9
VCC
VPP
VCC
VPP
Intel Factory-Programmed
User-Programmable
PP
PR Lock Register 0
≤ V
PPLK
8
7
6
5
• Low-voltage programming
• Absolute write protection via logic signal
• Low-voltage programming
4
3
System supply
Prot# (logic signal)
System supply
2
PP
1
0
programming voltage low can
61.
VCC
VPP
VCC
VPP
PP
60) The EFP
is below
Datasheet
77
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