PHOTOCOUPLER TRANS-OUT 4-SMD

TLP181

Manufacturer Part NumberTLP181
DescriptionPHOTOCOUPLER TRANS-OUT 4-SMD
ManufacturerToshiba
TLP181 datasheets
 


Specifications of TLP181

Number Of Channels1Input TypeDC
Voltage - Isolation3750VrmsCurrent Transfer Ratio (min)50% @ 5mA
Current Transfer Ratio (max)600% @ 5mAVoltage - Output80V
Current - Output / Channel50mACurrent - Dc Forward (if)50mA
Vce Saturation (max)400mVOutput TypeTransistor
Mounting TypeSurface MountPackage / Case4-SMD
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant  
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4
Selection Guide
Photocouplers for IGBT/MOSFET Gate Drive
Part Number
Pin Configuration
6
5
4
SO6 (reinforced Insulation)
TLP151*
T
opr
Direct drive of a
small-power
TLP151A*
IGBT/MOSFET
1
3
6
5
4
SO6 (reinforced Insulation)
T
opr
TLP155E
Direct drive of a
small-power
IGBT/MOSFET
1
3
8
7
6
5
SO8
TLP2451
T
opr
Direct drive of a
small-power
IGBT/MOSFET
TLP2451A*
High CMR
1
2
3
4
8
7
6
5
DIP8
Direct drive of a
TLP350
medium-power
TLP350F
IGBT/MOSFET
High CMR
Low power dissipation
1
2
3
4
8
7
6
5
DIP8
T
opr
TLP350H*
Direct drive of a
TLP350HF*
medium-power
IGBT/MOSFET
High CMR
1
2
3
4
8
7
6
5
DIP8
Direct drive of a
TLP351
medium-power
TLP351F
IGBT/MOSFET
Low power dissipation
1
2
3
4
8
7
6
5
DIP8
Direct drive of a
TLP351A*
small-power
TLP351AF*
IGBT/MOSFET
Low power dissipation
1
2
3
4
8
7
6
5
DIP8
T
opr
TLP351H*
Direct drive of a
TLP351HF*
small-power
IGBT/MOSFET
High CMR
1
2
3
4
8
7
6
5
DIP8
Direct drive of a
TLP352*
medium-power
TLP352F*
IGBT/MOSFET
Low power dissipation
T
opr
1
2
3
4
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
TÜV and VDE: : Approved
: Design which meets safety standard/approval pending as of January 2011
EN 60747-5-2-approved with option V4 or D4
For the latest information, please contact your nearest Toshiba sales representative.
Propagation
Output
Features
Delay Time (Max)
0.7 μs
Peak output
= 110°C (max)
current (max):
±0.6 A
0.5 μs
Peak output
= 100°C (max)
0.2 μs
current (max):
±0.6 A
0.7 μs
= 125°C (max)
Peak output
current (max):
±0.6 A
0.5 μs
Peak output
0.5 μs
current (max):
±2.5 A
= 125°C (max)
Peak output
0.5 μs
current (max):
±2.5 A
Peak output
0.7 μs
current (max):
±0.6 A
Peak output
0.7 μs
current (max):
±0.6 A
= 125°C (max)
Peak output
0.7 μs
current (max):
±6.0 A
Peak output
current (max):
0.2 μs
±2.5 A
= 125°C (max)
: Approved (reinforced insulation)
: Design which meets safety standard/approval pending as of January 2011
24
(2)
I
Safety Standards
FHL
BVs
(Max)
UL/cUL TÜV
VDE
BSI
IEC
(1)
/
3750
5 mA
Vrms
(1)
/
3750
7.5 mA
/
Vrms
/
3750
5 mA
Vrms
/
3750
5 mA
/
Vrms
3750
5 mA
/
Vrms
3750
5 mA
/
Vrms
3750
5 mA
/
Vrms
3750
5 mA
/
Vrms
3750
5 mA
/
Vrms