ATTINY861-15MZ Atmel, ATTINY861-15MZ Datasheet - Page 174

• Manufacturer Part Number: ATTINY861-15MZ
• Description: MCU AVR 8K FLASH 15MHZ 32-QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY861-15MZ

• Package / Case: 32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Speed: 16MHz
• Number Of I /o: 16
• Eeprom Size: 512 x 8
• Core Processor: AVR
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Program Memory Size: 8KB (8K x 8)
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Connectivity: USI
• Core Size: 8-Bit
• Processor Series: ATTINY8x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRMC320
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 11 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

22.7.3
22.7.4
174
ATtiny261/461/861
Chip Erase
Programming the Flash
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
B. Load Address Low byte
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte (0x00 - 0xFF).
4. Give XTAL1 a positive pulse. This loads the address low byte.
C. Load Data Low Byte
1. Set XA1, XA0 to “01”. This enables data loading.
2. Set DATA = Data low byte (0x00 - 0xFF).
3. Give XTAL1 a positive pulse. This loads the data byte.
D. Load Data High Byte
1. Set BS1 to “1”. This selects high data byte.
2. Set XA1, XA0 to “01”. This enables data loading.
3. Set DATA = Data high byte (0x00 - 0xFF).
4. Give XTAL1 a positive pulse. This loads the data byte.
1. E. Latch Data
2. Set BS1 to “1”. This selects high data byte.
3. Give PAGEL a positive pulse. This latches the data bytes. (See
F. Repeat B through E until the entire buffer is filled or until all data within the page is loaded.
waveforms)
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Table 22-7 on page
(1)
memories plus Lock bits. The Lock bits are
171. When programming the Flash,
Figure 22-3
for signal
2588B–AVR–11/06