P89LPC9402FBD,557 NXP Semiconductors, P89LPC9402FBD,557 Datasheet - Page 41

• Manufacturer Part Number: P89LPC9402FBD,557
• Description: IC 80C51 MCU FLASH 8K 64-LQFP
• Manufacturer: NXP Semiconductors
• Series: LPC900r

Specifications of P89LPC9402FBD,557

• Program Memory Type: FLASH
• Program Memory Size: 8KB (8K x 8)
• Package / Case: 64-LQFP
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 18MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LCD, LED, POR, PWM, WDT
• Number Of I /o: 23
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.4 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: P89LPC
• Core: 80C51
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 18 MHz
• Number Of Programmable I/os: 20
• Number Of Timers: 2
• Operating Supply Voltage: 2.4 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 935288631557

NXP Semiconductors
P89LPC9402_1
Product data sheet
7.28.1 General description
7.28.2 Features
7.28.3 Flash organization
7.28.4 Using flash as data storage
7.28 Flash program memory
The P89LPC9402 flash memory provides in-circuit electrical erasure and programming.
The flash can be erased, read, and written as bytes. The Sector and Page Erase functions
can erase any flash sector (1 kB) or page (64 bytes). The Chip Erase operation will erase
the entire program memory. ICP using standard commercial programmers is available. In
addition, IAP and byte-erase allows code memory to be used for non-volatile data storage.
On-chip erase and write timing generation contribute to a user-friendly programming
interface. The P89LPC9402 flash reliably stores memory contents even after
100,000 erase and program cycles. The cell is designed to optimize the erase and
programming mechanisms. The P89LPC9402 uses V
the Program/Erase algorithms. When voltage supply is lower than 2.4 V, the BOD FLASH
is tripped and flash erase/program is blocked.
The program memory consists of eight 1 kB sectors on the P89LPC9402 device. Each
sector can be further divided into 64-byte pages. In addition to sector erase, page erase,
and byte erase, a 64-byte page register is included which allows from 1 byte to 64 bytes of
a given page to be programmed at the same time, substantially reducing overall
programming time.
The flash code memory array of this device supports individual byte erasing and
programming. Any byte in the code memory array may be read using the MOVC
instruction, provided that the sector containing the byte has not been secured (a MOVC
instruction is not allowed to read code memory contents of a secured sector). Thus any
byte in a non-secured sector may be used for non-volatile data storage.
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Programming and erase over the full operating voltage range.
Byte erase allows code memory to be used for data storage.
Read/Programming/Erase using ISP/IAP/ICP.
Internal fixed boot ROM, containing low-level IAP routines available to user code.
Default loader providing ISP via the serial port, located in upper end of user program
memory.
Boot vector allows user-provided flash loader code to reside anywhere in the flash
memory space, providing flexibility to the user.
Any flash program or erase operation in 2 ms.
Programming with industry-standard commercial programmers.
Programmable security for the code in the flash for each sector.
100,000 typical erase/program cycles for each byte.
10 year minimum data retention.
Rev. 01 — 22 April 2009
8-bit microcontroller with accelerated two-clock 80C51 core
DD
as the supply voltage to perform
P89LPC9402
© NXP B.V. 2009. All rights reserved.
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