LPC2923FBD100,551 NXP Semiconductors, LPC2923FBD100,551 Datasheet - Page 69

IC ARM9 MCU FLASH 256KB 100-LQFP

LPC2923FBD100,551

Manufacturer Part Number
LPC2923FBD100,551
Description
IC ARM9 MCU FLASH 256KB 100-LQFP
Manufacturer
NXP Semiconductors
Series
LPC2900r
Datasheet

Specifications of LPC2923FBD100,551

Core Processor
ARM9
Core Size
32-Bit
Speed
125MHz
Connectivity
CAN, I²C, LIN, SPI, UART/USART, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
60
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Eeprom Size
16K x 8
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 3.6 V
Data Converters
A/D 16x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Processor Series
LPC29
Core
ARM968E-S
3rd Party Development Tools
MDK-ARM, RL-ARM, ULINK2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935287115551

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LPC2923FBD100,551
Manufacturer:
NXP Semiconductors
Quantity:
10 000
NXP Semiconductors
LPC2921_23_25_3
Product data sheet
9.5 Dynamic characteristics: flash memory and EEPROM
Table 37.
T
V
[1]
Table 38.
T
V
Symbol
N
t
t
t
t
t
t
t
t
Symbol
f
N
t
ret
prog
er
init
wr(pg)
fl(BIST)
a(clk)
a(A)
clk
ret
amb
amb
DDA(ADC3V3)
DDA(ADC3V3)
endu
endu
Number of program/erase cycles.
=
=
40
40
Parameter
endurance
retention time
programming time
erase time
initialization time
page write time
flash word BIST time
clock access time
address access time
°
°
Flash characteristics
EEPROM characteristics
C to +85
C to +85
Parameter
clock frequency
endurance
retention time
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
All information provided in this document is subject to legal disclaimers.
°
°
C; V
C; V
Rev. 03 — 14 April 2010
DD(CORE)
DD(CORE)
Conditions
powered
Conditions
powered
unpowered
word
global
sector
= V
= V
DD(OSC_PLL)
DD(OSC_PLL)
ARM9 microcontroller with CAN, LIN, and USB
; V
; V
LPC2921/2923/2925
Min
200
100000
10
DD(IO)
DD(IO)
[1]
Min
10000
10
20
0.95
95
95
-
0.95
-
-
-
= 2.7 V to 3.6 V;
= 2.7 V to 3.6 V;
Typ
375
500000
-
Typ
-
-
-
1
100
100
-
1
38
-
-
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
1.05
105
105
150
1.05
70
63.4
60.3
Max
400
-
-
Unit
kHz
cycles
years
Unit
cycles
years
years
ms
ms
ms
μs
ms
ns
ns
ns
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