M3062GF8NGP#U5 Renesas Electronics America, M3062GF8NGP#U5 Datasheet - Page 197

• Manufacturer Part Number: M3062GF8NGP#U5
• Description: MCU 3V 64K PB FREE 100-LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/60r

Specifications of M3062GF8NGP#U5

• Core Processor: M16C/60
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 85
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

194
CPU Rewrite Mode (Flash Memory Version)
Rev.1.1
Figure 1.29.4. Block erase flowchart
Block Erase Command (20
By writing the command code “20
in the second bus cycle that follows to the block address of a flash memory block, the system initiates
an auto erase (erase and erase verify) operation.
Whether the auto erase operation is completed can be confirmed by reading the status register or the
flash memory control register 0. At the same time the auto erase operation starts, the read status
register mode is automatically entered, so the content of the status register can be read out. The
status register bit 7 (SR7) is set to 0 at the same time the auto erase operation starts and is returned
to 1 upon completion of the auto erase operation. In this case, the read status register mode remains
active until the Read Array command (FF
flash memory is reset using its reset bit.
The RY/BY status flag of the flash memory control register 0 is 0 during auto erase operation and 1
when the auto erase operation is completed as is the status register bit 7.
After the auto erase operation is completed, the status register can be read out to know the result of
the auto erase operation. For details, refer to the section where the status register is detailed.
Figure 1.29.4 shows an example of a block erase flowchart.
Each block of the flash memory can be protected against erasure by using a lock bit. For details, refer
to the section where the data protect function is detailed.
Check full status check
____
Note: Refer to Figure 1.29.7 .
Block address
Status register
Write D0
Block erase
Write 20
completed
RY/BY=1?
(Note)
SR7=1?
Start
read
or
YES
16
16
16
NO
/D0
Error
16
16
)
” in the first bus cycle and the confirmation command code “D0
(Set an address to even address in the user
ROM area when reading the status register)
16
) or Read Lock Bit Status command (71
Erase error
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
M3062GF8NFP/GP
16
Mitsubishi microcomputers
) is written or the
16
”