R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 292

MCU 256KB FLASH 64K 144-LQFP

R4F24269NVFQV

Manufacturer Part Number
R4F24269NVFQV
Description
MCU 256KB FLASH 64K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet

Specifications of R4F24269NVFQV

Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R4F24269NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
R4F24269NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
6.8.11
When synchronous DRAM with a ×16-bit configuration is connected, DQMU and DQML are
used for the control signals needed for byte access.
Figures 6.61 and 6.62 show the control timing for DQM, and figure 6.63 shows an example of
connection of byte control by DQMU and DQML.
Page 262 of 1372
Upper data bus
Lower data bus
Precharge-sel
Address bus
Byte Access Control
SDRAMφ
DQMU
DQML
CKE
RAS
CAS
WE
φ
(Upper Byte Write Access: SDWCD = 0, CAS Latency 2)
Figure 6.61 DQMU and DQML Control Timing
Column address
PALL
T
p
Row address
Row address
ACTV
T
r
High
High
NOP
T
c1
High impedance
Column address
WRIT
T
H8S/2426, H8S/2426R, H8S/2424 Group
cl
REJ09B0466-0350 Rev. 3.50
NOP
T
c2
Jul 09, 2010

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