R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 331

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
Setting the DRMI bit in DRACCR to 1 enables an idle cycle to be inserted in the case of
consecutive read and write operations in DRAM/continuous synchronous DRAM space burst
access. Figures 6.93 and 6.94 show an example of the timing for idle cycle insertion in the case of
consecutive read and write accesses to DRAM/continuous synchronous DRAM space.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Figure 6.93 Example of Timing for Idle Cycle Insertion in Case of Consecutive Read and
UCAS, LCAS
Address bus
Note: n = 2 to 5
RASn (CSn)
WE (HWR)
Data bus
OE (RD)
Write Accesses to DRAM Space in RAS Down Mode
φ
T
p
DRAM space read
T
r
T
c1
T
c2
Idle cycle
DRAM space write
T
i
T
c1
T
Section 6 Bus Controller (BSC)
c2
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