HD64F3067RF20 Renesas Electronics America, HD64F3067RF20 Datasheet - Page 655

• Manufacturer Part Number: HD64F3067RF20
• Description: IC H8 MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3067RF20

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Package: 100PQFP
• Family Name: H8
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 16|32 Bit
• Number Of Programmable I/os: 70
• Interface Type: SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 7
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

18.5
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes can be made by
setting the PSU, P, E, PV, and EV bits in FLMCR.
For a description of state transition by FLMCR bit setting, see figure 18.10.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM or external memory.
For the programming/erasing notes, see section 18.9, Notes on Flash Memory
Programming/Erasing. For the wait time after each bit in FLMCR is set or cleared, see section
21.2.6, Flash Memory Characteristics.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, ESU, PSU, EV, PV, E, and
2. When programming or erasing, set the FWE pin input level to the high level, and set
Programming/Erasing Flash Memory
P bits in FLMCR is executed by a program in flash memory.
FWE to 1. (programming/erasing will not be executed if FWE = 0).
Rev. 4.00 Jan 26, 2006 page 631 of 938
REJ09B0276-0400
Section 18 ROM