DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 220

• Manufacturer Part Number: DF61657CN35FTV
• Description: IC H8SX/1657 MCU FLASH 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of DF61657CN35FTV

• Core Processor: H8SX
• Core Size: 32-Bit
• Speed: 35MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: 3DK1657 - DEV EVAL KIT FOR H8SX/1657
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.7.6
When the byte control SRAM space is specified, the RDNCR setting for the corresponding space
is invalid.
The read strobe negation timing is the same timing as when RDNn = 1 in the basic bus interface.
Note that the RD timing with respect to the DACK rising edge becomes different.
6.7.7
In the byte control SRAM interface, the extension cycles can be inserted before and after the bus
cycle in the same way as the basic bus interface. For details, refer to section 6.6.6, Extension of
Chip Select (CS) Assertion Period.
Rev. 2.00 Jun. 28, 2007 Page 194 of 864
REJ09B0341-0200
Read Strobe (RD)
Extension of Chip Select (CS) Assertion Period