DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 711

• Manufacturer Part Number: DF61657CN35FTV
• Description: IC H8SX/1657 MCU FLASH 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of DF61657CN35FTV

• Core Processor: H8SX
• Core Size: 32-Bit
• Speed: 35MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: 3DK1657 - DEV EVAL KIT FOR H8SX/1657
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.8.2
Programming/erasing of the user MAT is executed by downloading an on-chip program. The user
boot MAT cannot be programmed/erased in user program mode. The programming/erasing flow is
shown in figure 18.10.
Since high voltage is applied to the internal flash memory during programming/erasing, a
transition to the reset state or hardware standby mode must not be made during
programming/erasing. A transition to the reset state or hardware standby mode during
programming/erasing may damage the flash memory. If a reset is input, the reset must be released
after the reset input period (period of RES = 0) of at least 100 µs.
User Program Mode
transferred to the on-chip
program data is prepared
Programming/erasing
procedure program is
Programming/erasing
Programming/erasing
When programming,
RAM and executed
start
end
Figure 18.10 Programming/Erasing Flow
1.
2.
3.
4.
Exit RAM emulation mode beforehand. Download is not allowed
in emulation mode.
When the program data is adjusted in emulation mode, select
the download destination specified by FTDAR carefully. Make
sure that the download area does not overlap the emulation
area.
Programming/erasing is executed only in the on-chip RAM.
After programming/erasing is finished, protect the flash memory
by the hardware protection.
Section 18 Flash Memory (0.18-µm F-ZTAT Version)
Rev. 2.00 Jun. 28, 2007 Page 685 of 864
REJ09B0341-0200