DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 718

• Manufacturer Part Number: DF61657CN35FTV
• Description: IC H8SX/1657 MCU FLASH 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of DF61657CN35FTV

• Core Processor: H8SX
• Core Size: 32-Bit
• Speed: 35MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: 3DK1657 - DEV EVAL KIT FOR H8SX/1657
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 18 Flash Memory (0.18-µm F-ZTAT Version)
16. After programming finishes, clear FKEY and specify software protection. If this LSI is
Rev. 2.00 Jun. 28, 2007 Page 692 of 864
REJ09B0341-0200
 When reprogramming an erase block including an area on which the programming end
 Make sure that the programming end processing has been performed on completion of the
restarted by a reset immediately after programming has finished, secure the reset input period
(period of RES = 0) of at least 100 µs.
processing is executed, erase the erase block. An example of the erase block is shown in
figure 18.13.
programming. Before executing the programming end processing, the following processing
are not allowed: executing initialization, downloading an internal program, writing to a
RAM area which is a download destination, and switching MATs. If attempted,
programming is not performed correctly.
Figure 18.13 Example of Erase Block Including Programmed Area
Programming
end area
EB9
EB10
EB11
EB12
Before reprogramming erase blocks EB10 and
EB11 on which the programming end command
is issued, erase the blocks (EB10 and EB11).