UPD78F0551MA-FAA-AX Renesas Electronics America, UPD78F0551MA-FAA-AX Datasheet - Page 726

• Manufacturer Part Number: UPD78F0551MA-FAA-AX
• Description: MCU 8BIT 16-SSOP
• Manufacturer: Renesas Electronics America
• Series: 78K0/Kx2-Lr

Specifications of UPD78F0551MA-FAA-AX

• Core Processor: 78K/0
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: I²C, LIN, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 9
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

<R>
78K0/Kx2-L
25.8 Flash Memory Programming by Self Programming
a user program. Because this function allows a user application to rewrite the flash memory by using the 78K0/Kx2-L
microcontroller self programming library, it can be used to upgrade the program in the field.
be executed. If an unmasked interrupt request is generated in the EI state, the request branches directly from the self
programming library to the interrupt routine. After the self programming mode is later restored, self programming can be
resumed. However, the interrupt response time is different from that of the normal operation mode.
R01UH0028EJ0400 Rev.4.00
Sep 27, 2010
The 78K0/Kx2-L microcontrollers support a self programming function that can be used to rewrite the flash memory via
If an interrupt occurs during self programming, self programming can be temporarily stopped and interrupt servicing can
Cautions 1. The self programming function cannot be used when the CPU operates with the subsystem clock.
Remark For details of the self programming function and the self programming library, refer to “78K0
Microcontrollers User’s Manual Self Programming Library Type 01 (U18274E)” and “78K0
Microcontrollers Self Programming Library Type 01 Ver. 3.10 Operating Precautions (notification
document) (ZUD-CD-09-0122)”.
For details of the EEPROM emulation library, refer to “78K0 Microcontrollers User’s Manual EEPROM
Emulation Library Type 01 (U18275E)” and “78K0 Microcontrollers EEPROM Emulation Library Type
01 Ver.2.10 Operating Precautions (notification document) (ZUD-CD-09-0165)”.
2. To prohibit an interrupt during self programming, in the same way as in the normal operation
3. Make sure that the regulator output voltage mode is fixed when executing self programming or
4. The power supply voltage range in which the flash memory can be rewritten in normal power
5. Observe the following points when rewriting the flash memory in low power consumption mode:
mode, execute the self programming library in the state where the IE flag is cleared (0) by the DI
instruction. To enable an interrupt, clear (0) the interrupt mask flag to accept in the state where
the IE flag is set (1) by the EI instruction, and then execute the self programming library.
EEPROM emulation.
mode is V
library in normal power mode.
• Data area can be rewritten in low power consumption mode, but program area cannot.
• The flash memory cannot be rewritten in low power consumption mode if the power supply
• Flash memory that is erased and written in low power consumption mode cannot be accessed
• Blocks cannot be overwritten by using the self programming library. Be sure to erase a block
• A wait time of 2 ms is required before executing self programming after switching from normal
voltage is 2.0 V or lower.
in normal power mode.
consumption mode and transfer the flash memory contents to RAM.
first before rewriting data to it.
power mode to low power consumption mode.
Data area: Flash memory area handled as data
Program area: Flash memory area handled as the program
DD
≥ 2.5 V. Note that program area can be rewritten by using the self programming
To use this data in normal power mode, switch to low power
CHAPTER 25 FLASH MEMORY
712