AT91SAM7SE256B-CUR Atmel, AT91SAM7SE256B-CUR Datasheet - Page 19

• Manufacturer Part Number: AT91SAM7SE256B-CUR
• Description: IC ARM7 MCU FLASH 256K 128-LQFP
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM7SE256B-CUR

• Core Processor: ARM7
• Core Size: 16/32-Bit
• Speed: 55MHz
• Connectivity: EBI/EMI, I²C, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 88
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Processor Series: SAM7SE256
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 32 KB
• Interface Type: SPI, USB
• Maximum Clock Frequency: 48 MHz
• Number Of Programmable I/os: 88
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Operating Temperature Range: - 40 C to + 85 C
• Processor To Be Evaluated: AT91SAM7SE256B
• Supply Current (max): 60 uA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

7.6
7.7
6222F–ATARM–14-Jan-11
SDRAM Controller
Error Corrected Code Controller
• Multiple device adaptability
• Multiple Wait State Management
• Numerous configurations supported
• Programming facilities
• Energy-saving capabilities
• Error detection
• SDRAM Power-up Initialization by software
• Latency is set to two clocks (CAS Latency of 1, 3 Not Supported)
• Auto Precharge Command not used
• Mobile SDRAM supported (except for low-power extended mode and deep power-down
• Tracking the accesses to a NAND Flash device by triggering on the corresponding chip select
• Single bit error correction and 2-bit Random detection.
• Automatic Hamming Code Calculation while writing
• Automatic Hamming Code Calculation while reading
mode)
– Compliant with LCD Module
– Compliant with PSRAM in synchronous operations
– Programmable Setup Time Read/Write
– Programmable Hold Time Read/Write
– Programmable Wait State Generation
– External Wait Request
– Programmable Data Float Time
– 2K, 4K, 8K Row Address Memory Parts
– SDRAM with two or four Internal Banks
– SDRAM with 16- or 32-bit Data Path
– Word, half-word, byte access
– Automatic page break when Memory Boundary has been reached
– Multibank Ping-pong Access
– Timing parameters specified by software
– Automatic refresh operation, refresh rate is programmable
– Self-refresh, and Low-power Modes supported
– Refresh Error Interrupt
– ECC value available in a register
– Error Report, including error flag, correctable error flag and word address being
– Supports 8- or 16-bit NAND Flash devices with 512-, 1024-, 2048- or 4096-byte
detected erroneous
pages
SAM7SE512/256/32 Preliminary
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