AT91SAM7SE256B-CUR Atmel, AT91SAM7SE256B-CUR Datasheet - Page 204

IC ARM7 MCU FLASH 256K 128-LQFP

AT91SAM7SE256B-CUR

Manufacturer Part Number
AT91SAM7SE256B-CUR
Description
IC ARM7 MCU FLASH 256K 128-LQFP
Manufacturer
Atmel
Series
AT91SAMr
Datasheet

Specifications of AT91SAM7SE256B-CUR

Core Processor
ARM7
Core Size
16/32-Bit
Speed
55MHz
Connectivity
EBI/EMI, I²C, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
88
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Processor Series
SAM7SE256
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
SPI, USB
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
88
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Operating Temperature Range
- 40 C to + 85 C
Processor To Be Evaluated
AT91SAM7SE256B
Supply Current (max)
60 uA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT91SAM7SE256B-CUR
Manufacturer:
Atmel
Quantity:
10 000
23.6
23.6.1
Figure 23-3. Write Burst, 32-bit SDRAM Access
204
D[31:0]
A[12:0]
SDWE
SDCS
SDCK
RAS
CAS
Functional Description
SAM7SE512/256/32 Preliminary
SDRAM Controller Write Cycle
Row n
The SDRAM Controller allows burst access or single access. To initiate a burst access, the
SDRAM Controller uses the transfer type signal provided by the master requesting the access. If
the next access is a sequential write access, writing to the SDRAM device is carried out. If the
next access is a write-sequential access, but the current access is to a boundary page, or if the
next access is in another row, then the SDRAM Controller generates a precharge command,
activates the new row and initiates a write command. To comply with SDRAM timing parameters,
additional clock cycles are inserted between precharge/active (t
(t
Register” on page
t
RCD
RCD
) commands. For definition of these timing parameters, refer to the
= 3
col a
Dna
213. This is described in
col b
Dnb
col c
Dnc
col d
Dnd
col e
Dne
Figure 23-3
col f
Dnf
col g
Dng
below.
col h
Dnh
RP
col i
Dni
) commands and active/write
“SDRAMC Configuration
col j
Dnj
6222F–ATARM–14-Jan-11
col k
Dnk
col l
Dnl

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