FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 105
![MOSFET N-CH 300V 1.95A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF3N30
Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF3N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
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Small Signal Transistors – General Purpose Transistors (Continued)
BSR17A
KST3904
MMBT3904
KST4401
MMBT4400
MMBT4401
KST2222A
BSR14
MMBT2222A
MMBT5962
BC847
BC850
BCX70G
BCX70H
BCX70J
BCX70K
BCW71
MMBT100
MMBT100A
BCX19
BC817
BCW66G
KSC1623
MMBT3416
MMBT6428
MMBT5210
BCV71
MMBTA05
KST2484
MMBT2484
KST05
BC846
KST06
MMBTA06
BSS64
Products
V
CEO
40
40
40
40
40
40
40
40
40
45
45
45
45
45
45
45
45
45
45
45
45
45
50
50
50
50
60
60
60
60
60
65
80
80
80
(V)
V
CBO
120
60
60
60
60
60
60
75
75
75
45
50
50
45
45
45
45
50
75
75
50
50
75
60
50
60
50
80
60
60
60
60
80
80
80
(V)
V
EBO
6
6
6
6
6
6
6
6
6
8
6
5
5
5
5
5
5
6
6
5
5
5
5
5
3
4
5
4
6
5
4
6
4
4
5
(V)
Max (A)
0.05
200
0.2
0.2
0.2
0.6
0.6
0.6
0.6
0.8
0.1
0.1
0.1
0.2
0.2
0.2
0.2
0.5
0.5
0.5
0.5
0.8
0.1
0.5
0.5
0.5
0.1
0.5
0.1
0.5
0.5
I
1
1
–
–
C
Min
100
100
100
100
100
100
100
100
600
110
110
120
180
250
380
110
100
300
100
100
160
250
200
110
100
110
100
50
90
75
50
50
50
20
–
2-100
Discrete Power Products –
Max
1400
300
300
300
300
150
300
300
300
300
800
800
220
310
460
630
220
450
600
600
630
400
600
225
650
600
220
800
500
800
–
–
–
–
–
h
FE
@V
4.5
10
10
10
CE
1
1
1
1
1
1
5
5
5
5
5
5
5
5
1
1
1
1
1
6
5
5
5
1
5
5
1
5
1
1
1
(V) @I
0.01
C
150
150
150
150
150
150
100
100
100
100
100
0.1
0.1
10
10
10
10
10
10
10
10
10
10
2
2
2
2
2
2
2
1
2
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.75
0.75
0.75
0.55
0.55
0.55
0.55
0.25
0.62
0.25
0.25
0.35
0.35
0.25
0.25
0.25
0.3
0.3
0.3
0.2
0.6
0.6
0.4
0.4
0.7
0.7
0.3
0.3
0.6
0.7
0.6
0.2
1
1
1
@I
V
CE (sat)
C
500
500
500
500
500
500
100
100
200
200
500
500
500
100
100
100
100
100
100
100
50
50
50
10
50
50
50
50
10
50
10
10
50
1
1
(mA) @I
1.25
1.25
1.25
1.25
B
0.5
0.1
0.5
0.1
50
50
50
50
50
50
20
20
50
50
50
10
10
10
10
10
15
5
5
5
5
5
3
5
1
1
5
(mA)
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