FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 77
![MOSFET N-CH 300V 1.95A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF3N30
Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF3N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
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www.fairchildsemi.com
MOSFET and Schottky Diodes
FDFS6N303
FDFS2P106A
FDFS2P103
FDFS2P103A
FDFS2P102
FDFS2P102A
FDFC3N108
FDC6392S
FDW6923
SO-8 N-Channel
SO-8 P-Channel
SSOT-6 N-Channel
SSOT-6 P-Channel
TSSOP-8 P-Channel
Products
V
DS
-60
-30
-30
-20
-20
-20
-20
30
20
(V)
I
D
5.3
5.3
3.3
3.3
2.2
3.5
6
3
3
(A)
0.035
0.059
0.059
0.125
0.125
10V
0.11
–
–
–
R
DS(on)
Max (Ω) V
0.055
0.092
0.092
0.045
4.5V
0.14
0.07
0.15
0.2
0.2
2-72
Discrete Power Products –
GS
0.095
0.075
=
2.5V
0.2
–
–
–
–
–
–
Bold = New Products (introduced January 2003 or later)
(nC)
5.3
5.7
3.5
2.1
3.5
3.7
9.7
12
15
Q
G
@ V
4.5
4.5
4.5
4.5
4.5
10
GS
5
5
5
MOSFETs and Schottky Diodes
(V)
V
0.449
0.42
0.58
0.57
0.35
0.58
0.58
0.45
F
0.5
Schottky Diode
(V)
@ I
0.25
F
3
2
1
2
2
2
1
2
(A)
P
D
0.96
0.96
1.2
2
2
2
2
2
2
(W)
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