FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 22
![MOSFET N-CH 300V 1.95A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF3N30
Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF3N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
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SO-8 (Continued)
FDS4470
FDS4780
FDS4480
SSD2009A
NDS9959
SSD2007A
HUFA76413DK8
HUF76407DK8T
HUFA76407DK8T
FDS9945
NDS9945
SSD2025
FDS5670
FDS5680
FDS5690
RF1K49154
HUFA76404DK8T
FDS3890
FDS3812
HUFA76504DK8T
FDS3572
FDS3570
FDS3580
HUF75531SK8
HUFA75531SK8
FDS3590
FDS3512
FDS3992
FDS3912
FDS3601
FDS3672
FDS3670
FDS3682
HUF75631SK8
HUFA75631SK8
FDS3680
FDS3690
FDS3692
FDS3612
Products
Min. (V)
BV
100
100
100
100
100
100
100
100
100
100
100
100
40
40
40
50
50
50
60
60
60
60
60
60
60
60
60
60
62
80
80
80
80
80
80
80
80
80
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.0105
0.009
0.012
0.049
0.014
0.028
0.044
0.074
0.016
0.019
0.027
0.037
0.062
0.125
0.022
0.035
0.039
0.039
0.043
10V
0.13
0.09
0.09
0.02
0.13
0.03
0.03
0.07
0.48
0.06
0.12
0.3
0.3
0.1
0.1
0.2
–
R
DS(ON)
0.056@5V
0.017@6V
0.025@6V
0.033@6V
0.084@6V
0.222@5V
0.029@6V
0.022@6V
0.031@6V
0.043@6V
0.108@6V
0.135@6V
0.028@6V
0.057@6V
0.048@6V
0.105@6V
2-17
0.11@5V
0.05@6V
0.08@6V
0.53@6V
0.13@6V
0.5@5V
0.105
4.5V
0.105
0.2
0.2
0.2
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2.5V
GS
Bold = New Products (introduced January 2003 or later)
Replaced by Si9945DY
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Replaced by FDS3682
–
–
–
–
Replaced by FDS3692
–
–
=
Discrete Power Products –
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
11.5
GS
4.3
9.4
9.4
3.8
6.6
3.7
45
30
29
19
18
15
49
30
23
14
29
13
31
54
34
37
37
23
13
11
14
28
19
35
35
38
11
14
8
= 5V
I
D
12.5
10.8
10.8
4.8
3.8
3.8
3.5
3.3
3.2
4.7
3.4
2.3
8.9
7.6
6.5
4.5
1.3
7.5
5.5
5.5
5.2
4.5
3.4
10
3
2
2
8
7
2
9
6
6
4
3
6
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2
2
2
2
2
2
2
2
2
2
(W)
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