FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 59
![MOSFET N-CH 300V 1.95A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF3N30
Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF3N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
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www.fairchildsemi.com
TO-263 (D
FQB55N10
HUF76639S3S
HUFA76639S3S
HUF75637S3S
HUFA75637S3S
HUF76633S3S
HUFA76633S3S
FDB3682
FQB44N10
HUF75631S3S
HUFA75631S3S
IRFW550A
RF1S40N10SM
FQB33N10
IRFW540A
FQB33N10L
HUF75623S3S
HUFA75623S3S
FQB19N10
FQB19N10L
IRFW530A
FQB13N10
FQB13N10L
IRFW520A
FQB7N10
FQB7N10L
IRFW510A
FQB32N12V2
FDB2532
FDB2552
FQB45N15V2
FQB46N15
HUFA75842S3S
FDB42AN15A0
FDB2572
FDB2570
FQB16N15
FQB14N15
FQB9N15
Products
2
Min. (V)
PAK) (Continued)
BV
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
120
150
150
150
150
150
150
150
150
150
150
150
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.026
0.026
0.026
0.035
0.035
0.036
0.039
0.052
0.052
0.052
0.064
0.064
0.016
0.036
0.042
0.042
0.042
0.056
10V
0.03
0.03
0.04
0.04
0.04
0.04
0.11
0.18
0.18
0.35
0.35
0.05
0.04
0.08
0.16
0.21
0.1
0.1
0.2
0.4
0.4
0.055@5V
0.024@6V
0.054@6V
0.075@6V
0.06@6V
0.11@5V
0.38@5V
0.06@6V
0.09@6V
0.2@5V
R
0.027
0.027
0.036
0.036
4.5V
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-54
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
18.5
115
8.7
5.8
4.6
8.5
75
71
71
48
48
56
56
48
35
35
75
38
60
30
23
23
19
14
27
12
16
41
86
41
72
85
77
30
27
40
23
18
10
= 5V
I
D
43.5
12.8
12.8
45.6
16.4
14.4
9.2
7.3
7.3
5.6
55
51
51
44
44
39
39
32
33
33
40
40
33
28
33
22
22
19
19
14
32
79
37
45
43
35
29
22
9
(A)
MOSFETs
P
D
155
180
155
155
145
146
120
120
167
160
127
107
150
310
220
210
230
135
108
104
180
145
127
150
150
95
85
85
75
75
55
65
65
45
40
40
33
93
75
(W)
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