FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 186

• Manufacturer Part Number: FQPF3N30
• Description: MOSFET N-CH 300V 1.95A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.95A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.95 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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BV
CES
600
600
600
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600
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600
600
600
600
600
600
600
600
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600
600
600
600
600
600
600
(V)
Min
I
C
@100°C
20
20
20
20
20
20
30
30
30
30
30
30
50
50
50
10
10
10
10
15
15
15
15
20
20
20
20
50
50
50
V
CE(sat)
(V)
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.2
2.2
2.2
Typ
t
f
Typ (ns)
140
140
140
140
140
140
130
130
130
130
130
130
120
120
120
100
100
100
100
100
100
100
100
100
100
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100
110
110
110
2-181
Short Circut
Rated
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Bold = New Products (introduced January 2003 or later)
Built in
Diode
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
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Controls
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IGBTs