FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 14

• Manufacturer Part Number: FQPF3N30
• Description: MOSFET N-CH 300V 1.95A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.95A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.95 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SuperSOT™-6/TSOP-6 FLMP
FDC6000NZ
FDC796N
FDC3616N
FDC6036P
FDC697P
FDC699P
FDC6020C
SSOT-6/TSOP-6 FLMP N-Channel
SSOT-6/TSOP-6 FLMP P-Channel
SSOT-6/TSOP-6 FLMP Complementary N- and P-Channel
Products
Min. (V)
-20 | 20
BV
100
-20
-20
-20
20
30
DSS
Complementary
Config.
Single
Single
Single
Single
Dual
Dual
0.009
10V
0.07
–
–
–
–
–
R
0.055 | 0.027 0.082 | 0.039
DS(ON)
0.08@6V
0.012
0.044
0.022
4.5V
0.02
0.02
Max (Ω) @ V
2-9
0.028
0.064
0.025
2.5V
0.03
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
0.095
1.8V
0.035
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
7 | 6
GS
14
23
10
39
27
8
= 5V
-4.2 | 5.9
I
D
12.5
7.3
3.7
5
8
7
(A)
MOSFETs
P
D
1.6
1.8
1.6
2
2
2
2
(W)