FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 58
![MOSFET N-CH 300V 1.95A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF3N30
Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF3N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
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- Download datasheet (4Mb)
www.fairchildsemi.com
TO-263 (D
HUF76429S3S
HUFA76429S3S
FDB5690
HUFA76423S3S
HUF76419S3S
HUFA76419S3S
FQB30N06L
FQB30N06
FQB20N06L
FQB20N06
FQB13N06L
FQB13N06
FDB045AN08A0
FDB060AN08A0
FDB16AN08A0
HUF75545S3S
HUFA75545S3S
HUF75542S3S
HUFA75542S3S
FQB90N08
FQB70N08
FQB44N08
FQB24N08
FQB17N08L
FQB17N08
FQB9N08
FQB9N08L
IRLW540A
IRLW530A
IRLW520A
IRLW510A
HUF75645S3S
HUFA75645S3S
HUF76645S3S
HUFA76645S3S
FDB3652
FQB70N10
HUF75639S3S
HUFA75639S3S
Products
2
PAK) (Continued)
Min. (V)
BV
100
100
100
100
100
100
100
100
100
100
100
100
60
60
60
60
60
60
60
60
60
60
60
60
75
75
75
80
80
80
80
80
80
80
80
80
80
80
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0045
0.022
0.022
0.027
0.035
0.035
0.035
0.055
0.135
0.006
0.016
0.014
0.014
0.016
0.017
0.034
0.115
0.014
0.014
0.014
0.014
0.016
0.025
0.025
0.025
10V
0.03
0.04
0.06
0.11
0.01
0.01
0.06
0.21
0.21
0.1
–
–
–
–
0.0084@6V
0.032@6V
0.045@5V
0.029@6V
0.115@5V
0.058@5V
0.026@6V
0.07@5V
0.14@5V
0.01@6V
0.23@5V
0.12@5V
0.22@5V
0.44@5V
R
4.5V
0.025
0.025
0.035
0.015
0.015
0.04
0.04
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-53
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
11.5
38.4
16.9
10.2
105
105
106
106
127
127
9.5
4.8
5.8
8.8
5.9
4.7
5.5
38
38
23
28
22
22
15
19
92
99
28
80
80
84
75
38
19
12
41
85
57
57
= 5V
I
D
13.6
16.5
16.5
9.3
9.3
9.2
5.6
47
47
32
35
29
29
32
30
21
20
13
80
80
58
75
75
75
75
71
70
44
24
28
14
75
75
75
75
61
57
56
56
(A)
MOSFETs
P
D
110
110
310
285
135
270
270
230
230
160
155
127
121
310
310
310
310
150
160
200
200
58
85
75
75
79
79
53
53
45
45
75
65
65
40
40
62
49
37
(W)
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