FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 6

• Manufacturer Part Number: FQPF3N30
• Description: MOSFET N-CH 300V 1.95A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.95A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.95 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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BGA
SC70-6
SC75-6 FLMP
SuperSOT™-3/SOT-23
MicroFET™
SuperSOT™-6/TSOP-6 FLMP
SuperSOT™-6/TSOP-6
TSSOP-8
SuperSOT™-8
SO-8 FLMP
SO-8
TO-92
SOT-223
SO-14
TO-92L
TO-251 (IPAK)
TO-252 (DPAK)
DIP-8
TO-126
TO-220
TO-262 (I
TO-263 (D
TO-220F
TO-247
TO-3P
TO-3PF
TO-264
2-3
2-15
2
2-35
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2
2-20
2-23
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2-36
2-37
2-4
2-65
2-66
2-69
2-71
2-24
2-21
2-59
2-12
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2-8
2-5
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2-25
2-29
2-46
2-51
2-6
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2-1
Discrete Power Products