MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 11
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MT47H256M8EB-25E:C
Manufacturer Part Number
MT47H256M8EB-25E:C
Description
256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT47H256M8EB-25EC.pdf
(134 pages)
Specifications of MT47H256M8EB-25E:C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (256M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
ATT
Quantity:
400
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
BGA
Quantity:
11 350
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
20 000
Automotive Temperature
General Notes
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
The automotive temperature (AT) option, if offered, has two simultaneous require-
ments: ambient temperature surrounding the device cannot be less than –40°C or
greater than +105°C, and the case temperature cannot be less than –40°C or greater
than +105°C. JEDEC specifications require the refresh rate to double when T
+85°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when T
+85°C.
• The functionality and the timing specifications discussed in this data sheet are for the
• Throughout the data sheet, the various figures and text refer to DQs as “DQ.” The DQ
• Complete functionality is described throughout the document, and any page or dia-
• Any specific requirement takes precedence over a general statement.
DLL-enabled mode of operation.
term is to be interpreted as any and all DQ collectively, unless specifically stated oth-
erwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte.
For the lower byte (DQ0–DQ7), DM refers to LDM and DQS refers to LDQS. For the
upper byte (DQ8–DQ15), DM refers to UDM and DQS refers to UDQS.
gram may have been simplified to convey a topic and may not be inclusive of all
requirements.
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x4, x8, x16 DDR2 SDRAM
Functional Description
© 2006 Micron Technology, Inc. All rights reserved.
C
is < 0°C or >
C
exceeds