MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 61

• Manufacturer Part Number: MT47H256M8EB-25E:C
• Description: 256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M8EB-25E:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Compliant

Figure 24: Nominal Slew Rate for
Figure 25: Tangent Line for
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
V
V
V
V
V
V
V
V
Setup slew rate
falling signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
REF(DC)
REF(DC)
V
V
CK#
DDQ
CK#
DDQ
V
CK
V
t
CK
SS
IS
SS
Nominal
V
V
line
REF
REF
region
t
region
IS
=
to AC
to AC
ΔTF
V
ΔTF
REF(DC)
Tangent
- V
ΔTF
line
t IS
t IS
IL(AC)max
Setup slew rate
rising signal
Nominal
slew rate
Nominal
t IH
line
t IH
61
=
Setup slew rate
rising signal
Tangent line (V
ΔTR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
ΔTR
t IS
t IS
2Gb: x4, x8, x16 DDR2 SDRAM
Nominal
slew rate
=
Tangent
IH[AC]min
ΔTR
V
V
line
REF
V
region
IH(AC)min
t IH
REF
t IH
region
to AC
Input Slew Rate Derating
to AC
- V
ΔTR
REF[DC]
- V
REF(DC)
)
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