MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 68
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MT47H256M8EB-25E:C
Manufacturer Part Number
MT47H256M8EB-25E:C
Description
256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT47H256M8EB-25EC.pdf
(134 pages)
Specifications of MT47H256M8EB-25E:C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (256M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant
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Company
Part Number
Manufacturer
Quantity
Price
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MT47H256M8EB-25E:C
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Part Number:
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Figure 30: Nominal Slew Rate for
Figure 31: Tangent Line for
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Note:
Note:
V
V
V
V
Hold slew rate
rising signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
V
V
V
V
DQS# 1
REF(DC)
1. DQS, DQS# signals must be monotonic between V
IH(AC)min
IH(DC)min
1. DQS, DQS# signals must be monotonic between V
IL(DC)max
IL(AC)max
DQS 1
V
V
DQS# 1
DDQ
REF(DC)
DQS 1
V
V
SS
Hold slew rate
rising signal
t
DDQ
V
DH
SS
DC to V
=
region
DC to V
Tangent line (V
region
t
DH
REF
=
REF
V
REF(DC)
Nominal
slew rate
t IS
REF[DC]
Tangent
ΔTR
t IS
- V
line
ΔTR
IL(DC)max
- V
IL[DC]max
t IH
t IH
)
68
ΔTR
ΔTR
Hold slew rate
falling signal
Hold slew rate
falling signal
Nominal
line
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Nominal
slew rate
t IS
DC to V
=
=
region
Tangent line (V
t IS
Tangent
V
DC to V
line
IH(DC)min
region
REF
t IH
t IH
2Gb: x4, x8, x16 DDR2 SDRAM
REF
ΔTF
- V
ΔTF
ΔTF
IH[DC]min
ΔTF
REF(DC)
Nominal
IL(DC)max
IL(DC)max
line
Input Slew Rate Derating
- V
REF[DC]
and V
and V
)
© 2006 Micron Technology, Inc. All rights reserved.
IH(DC)min
IH(DC)min
.
.