MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 92
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MT47H256M8EB-25E:C
Manufacturer Part Number
MT47H256M8EB-25E:C
Description
256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT47H256M8EB-25EC.pdf
(134 pages)
Specifications of MT47H256M8EB-25E:C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (256M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
ATT
Quantity:
400
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
BGA
Quantity:
11 350
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
20 000
Figure 45: Multibank Activate Restriction
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Bank address
Command
Address
CK#
CK
Bank a
ACT
Row
T0
Note:
t RRD (MIN)
READ
Bank a
Col
T1
1. DDR2-533 (-37E, x4 or x8),
t
FAW (MIN) = 37.5ns.
Bank b
Row
ACT
T2
READ
Bank b
Col
T3
Bank c
Row
ACT
T4
92
t
CK = 3.75ns, BL = 4, AL = 3, CL = 4,
t FAW (MIN)
READ
Bank c
Col
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank d
Row
ACT
T6
2Gb: x4, x8, x16 DDR2 SDRAM
READ
Bank d
Col
T7
NOP
T8
© 2006 Micron Technology, Inc. All rights reserved.
t
RRD (MIN) = 7.5ns,
NOP
T9
ACTIVATE
Don’t Care
Bank e
Row
T10
ACT