MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 45
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT47H256M8EB-25E:C
Manufacturer Part Number
MT47H256M8EB-25E:C
Description
256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT47H256M8EB-25EC.pdf
(134 pages)
Specifications of MT47H256M8EB-25E:C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (256M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
ATT
Quantity:
400
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
BGA
Quantity:
11 350
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
20 000
ODT DC Electrical Characteristics
Table 14: ODT DC Electrical Characteristics
All voltages are referenced to V
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Parameter
R
EMR (A6, A2) = 0, 1
R
EMR (A6, A2) = 1, 0
R
EMR (A6, A2) = 1, 1
Deviation of VM with respect to V
TT
TT
TT
effective impedance value for 75Ω setting
effective impedance value for 150Ω setting
effective impedance value for 50Ω setting
Notes:
1. R
2. Minimum IT and AT device values are derated by six percent when the devices operate
3. Measure voltage (VM) at tested ball with no load.
SS
being tested, and then measuring current, I(V
between –40°C and 0°C (T
DDQ
TT1(EFF)
/2
and R
TT2(EFF)
are determined by separately applying V
45
C
).
Symbol
R
R
R
TT1(EFF)
TT2(EFF)
TT3(EFF)
ΔVM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
ODT DC Electrical Characteristics
2Gb: x4, x8, x16 DDR2 SDRAM
IH[AC]
Min
120
60
40
–6
), and I(V
Nom
150
75
50
–
IL[AC]
© 2006 Micron Technology, Inc. All rights reserved.
IH(AC)
Max
180
90
60
), respectively.
6
and V
Units
%
IL(DC)
Ω
Ω
Ω
to the ball
Notes
1, 2
1, 2
1, 2
3