MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 66
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MT47H256M8EB-25E:C
Manufacturer Part Number
MT47H256M8EB-25E:C
Description
256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT47H256M8EB-25EC.pdf
(134 pages)
Specifications of MT47H256M8EB-25E:C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (256M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
ATT
Quantity:
400
Company:
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MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
BGA
Quantity:
11 350
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
20 000
Table 35: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at V
Reference points indicated in bold
Table 36: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at V
Reference points indicated in bold
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
DQ (V/ns)
DQ (V/ns)
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
t
t
355
364
380
402
429
463
510
572
647
405
414
430
452
479
513
560
622
697
2.0 V/ns
2.0 V/ns
DS
DS
t
t
341
340
340
340
340
340
340
340
339
391
390
390
390
390
390
390
390
389
DH
DH
t
355
364
380
402
429
463
510
572
647
t
405
414
430
452
479
513
560
622
697
1.8 V/ns
DS
1.8 V/ns
DS
t
t
341
340
340
340
340
340
340
340
339
391
390
390
390
390
390
390
390
389
DH
DH
t
355
364
380
402
429
463
510
572
647
t
405
414
430
452
479
513
560
622
697
1.6 V/ns
1.6 V/ns
DS
DS
DQS Single-Ended Slew Rate Derated (at V
DQS Single-Ended Slew Rate Derated (at V
t
t
341
340
340
340
340
340
340
340
339
391
390
390
390
390
390
390
390
389
DH
DH
t
t
355
364
380
402
429
463
510
572
647
405
414
430
452
479
513
560
622
697
1.4 V/ns
1.4 V/ns
DS
DS
t
t
341
340
340
340
340
340
340
340
339
391
390
390
390
390
390
390
390
389
DH
DH
66
t
355
364
380
402
429
463
510
572
647
t
405
414
430
452
479
513
560
622
697
1.2 V/ns
1.2 V/ns
DS
DS
t
t
340
390
341
340
340
340
340
340
340
339
391
390
390
390
390
390
390
389
DH
DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
395
445
t
t
370
379
417
444
478
525
587
662
420
429
467
494
528
575
637
712
1.0 V/ns
DS
1.0 V/ns
DS
2Gb: x4, x8, x16 DDR2 SDRAM
t
335
t
385
REF
336
335
335
335
335
335
335
334
REF
386
385
385
385
385
385
385
384
DH
DH
) at DDR2-533
) at DDR2-400
Input Slew Rate Derating
t
t
380
389
405
427
454
488
535
597
672
430
439
455
477
504
538
585
647
722
0.8 V/ns
DS
0.8 V/ns
DS
REF
REF
)
)
t
t
332
332
332
332
332
331
332
332
331
382
382
382
382
382
381
382
382
381
DH
DH
© 2006 Micron Technology, Inc. All rights reserved.
t
t
390
399
415
437
464
498
545
607
682
440
449
465
487
514
548
595
657
732
0.6 V/ns
DS
0.6 V/ns
DS
t
t
329
329
328
328
328
328
328
328
328
379
379
378
378
378
378
378
378
378
DH
DH
t
400
409
425
447
474
508
555
617
692
t
450
459
475
497
524
558
605
667
742
0.4 V/ns
0.4 V/ns
DS
DS
t
t
326
325
325
325
325
325
325
325
324
376
375
375
375
375
375
375
375
374
DH
DH