MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 14

• Manufacturer Part Number: MT47H256M8EB-25E:C
• Description: 256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M8EB-25E:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Compliant

Figure 5: Functional Block Diagram – 128 Meg x 16
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
BA0–BA2
A0–A13,
RAS#
CAS#
WE#
ODT
CKE
CK#
CS#
CK
16
Address
register
registers
Mode
Control
logic
16
counter
Refresh
14
10
3
14
address
2
Row-
MUX
14
control
Bank
Column-
counter/
logic
address
latch
decoder
address
Bank 0
latch
row-
and
Bank 1
Bank 2
Bank 3
Bank 4
8
2
16,384
Bank 5
Bank 6
Bank 7
DM mask logic
(16,384 x 256 x 64)
I/O gating
Memory array
Sense amplifier
decoder
Column
16,384
(x64)
256
Bank 0
Bank 1
Bank 2
Bank 3
Bank 4
Bank 5
Bank 6
Bank 7
14
COL0, COL1
CK, CK#
64
64
64
Read
latch
CK out
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
drivers
CK in
FIFO
and
16
16
16
16
Mask
Data
COL0, COL1
8
64
MUX
2Gb: x4, x8, x16 DDR2 SDRAM
generator
2
2
16
16
16
16
2
2
DQS
registers
Input
DATA
16
Functional Block Diagrams
UDQS, UDQS#
LDQS, LDQS#
2
2
2
2
16
16
16
16
4
CK, CK#
16
2
DRVRS
4
DLL
RCVRS
© 2006 Micron Technology, Inc. All rights reserved.
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
ODT control
R2
R2
R2
R2
R2
R2
VssQ
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
VddQ
DQ0–DQ15
UDQS, UDQS#
LDQS, LDQS#
UDM, LDM