MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 28

no-image

MT47H256M8EB-25E:C

Manufacturer Part Number
MT47H256M8EB-25E:C
Description
256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT47H256M8EB-25E:C

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (256M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
ATT
Quantity:
400
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
BGA
Quantity:
11 350
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
10 000
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
XILINX
0
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
MT47H256M8EB-25E:C
Quantity:
39
Table 9: I
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Timing patterns for 8-bank x4/x8 devices
Timing patterns for 8-bank x16 devices
Speed
Grade
-187E
-187E
-37E
-25E
-37E
-25E
-5E
-3E
-25
-5E
-3E
-25
-3
-3
DD7
I
A0 RA0 A1 RA1 A2 RA2 A3 RA3 A4 RA4 A5 RA5 A6 RA6 A7 RA7
A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D D
A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D
A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D A4 RA4 D D D D A5 RA5 D D D D A6 RA6 D
D D D A7 RA7 D D D D
DD7
Timing Patterns (8-Bank Interleave READ Operation)
Timing Patterns
Notes:
1. A = active; RA = read auto precharge; D = deselect.
2. All banks are being interleaved at minimum
3. Control and address bus inputs are STABLE during DESELECTs.
a BL = 4.
28
Electrical Specifications – I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x4, x8, x16 DDR2 SDRAM
t
RC (I
DD
) without violating
© 2006 Micron Technology, Inc. All rights reserved.
DD
t
Parameters
RRD (I
DD
) using

Related parts for MT47H256M8EB-25E:C