MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 67

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MT47H256M8EB-25E:C

Manufacturer Part Number
MT47H256M8EB-25E:C
Description
256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT47H256M8EB-25E:C

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (256M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant

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39
Figure 28: Nominal Slew Rate for
Figure 29: Tangent Line for
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Note:
Note:
V
V
V
V
Setup slew rate
falling signal
V
V
V
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
DQS# 1
DQS# 1
REF(DC)
REF(DC)
1. DQS, DQS# signals must be monotonic between V
1. DQS, DQS# signals must be monotonic between V
DQS 1
DQS 1
V
V
DDQ
DDQ
V
V
SS
SS
t
Setup slew rate
falling signal
DS
=
V
REF
V
Tangent line (V
region
REF
region
to AC
ΔTF
to AC
t
DS
ΔTF
=
Tangent line
REF[DC]
ΔTF
Nominal line
t
DS
V
REF(DC)
Nominal
slew rate
- V
t DS
IL[AC]max
t
- V
ΔTF
DH
)
IL(AC)max
t DH
Nominal
Setup slew rate
rising signal
line
67
Setup slew rate
rising signal
ΔTR
ΔTR
=
Tangent line (V
Tangent line
t
DS
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Nominal
slew rate
t DS
V
t
DH
REF
region
IH[AC]min
ΔTR
=
to AC
V
IH(AC)min
V
t DH
- V
REF
2Gb: x4, x8, x16 DDR2 SDRAM
region
REF[DC]
to AC
ΔTR
)
- V
IL(DC)max
IL(DC)max
REF(DC)
Input Slew Rate Derating
and V
and V
© 2006 Micron Technology, Inc. All rights reserved.
IH(DC)min
IH(DC)min
.
.

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