IHW30N120R Infineon Technologies, IHW30N120R Datasheet
IHW30N120R
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IHW30N120R Summary of contents
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... Soft Switching Series CE(sat) 1 for target applications V T Marking CE(sat),Tj=25°C j,max 1.55V H30R120 175 C Symbol jmax 1200V, T 175 jmax limited jmax < IHW30N120R PG-TO-247-3-21 Package PG-TO-247-3-21 Value Unit 1200 130 120 395 W -40...+175 C -55...+175 260 Rev. 2.2 May 06 q ...
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... Power Semiconductors Soft Switching Series Symbol Conditions Symbol Conditions IHW30N120R Max. Value Unit 0.38 K/W 0.37 40 Value Unit min. Typ. max. 1200 - - V - 1.55 1. 1.3 1 1.4 - 5.1 5.8 6.4 µ 2500 - - 100 None Ω - 2573 - 197 - Rev. 2.2 May 06 q ...
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... Conditions Energy losses include E “tail” and diode reverse recovery =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IHW30N120R Value Unit min. typ. max 1007 - - 2 2.9 - Value Unit min. typ. max 1157 - - 4 4.3 - Rev. 2.2 May 06 q ...
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... Figure 2. IGBT Safe operating area = 600V 50A 40A 30A 20A 10A 0A 25°C 125°C 150°C Figure 4. DC Collector current as a function 4 IHW30N120R 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 C;V =15V 50°C 75°C 100°C 125°C 150°C ...
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... Power Semiconductors Soft Switching Series 80A V 70A 60A 50A 40A 30A 20A 10A Figure 6. Typical output characteristic 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V -50° Figure 8. Typical collector-emitter 5 IHW30N120R =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 175° 0°C 50°C 100°C ...
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... Soft Switching Series 1µs t 100ns f 40A 50A Figure 10. Typical switching times as a =34Ω 150°C -50°C Figure 12. Gate-emitter threshold voltage as =600V, =34Ω IHW30N120R t d(off) t d(on GATE RESISTOR G function of gate resistor (inductive load, T =175° =600V, V =0/15V, I =30A Dynamic test circuit in Figure E) 0°C 50° ...
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... Figure 14. Typical turn-off energy as a =34Ω, G 5mJ 4mJ 3mJ E 2mJ 1mJ 0mJ 150°C 400V V Figure 16. Typical turn-off energy as a =600V, =34Ω IHW30N120R off R , GATE RESISTOR G function of gate resistor (inductive load, T =175° =600V, V =0/15V, I =30A Dynamic test circuit in Figure E) off ...
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... 10ms 100ms 1µs Figure 20. Typical Diode transient thermal impedance as a function of pulse width ( IHW30N120R 10V 20V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage ( V =0V MHz) GE D=0.5 0.2 0 0.05 0.1221 6.16*10 0.1241 6.91*10 0.02 0.0977 5.43*10 0.01 0.0248 3.12* single pulse ...
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... Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors Soft Switching Series 1.5V I =20A F 10A 7.5A 1.0V 0.5V 0.0V -50°C 0° JUNCTION TEMPERATURE J Figure 22. Typical diode forward voltage as a function of junction temperature 9 IHW30N120R q 50°C 100°C 150°C Rev. 2.2 May 06 ...
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... PG-TO247-3-21 Power Semiconductors Soft Switching Series 10 IHW30N120R q Rev. 2.2 May 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Soft Switching Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 11 IHW30N120R =180nH =39pF. Rev. 2.2 May 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors Soft Switching Series 12 IHW30N120R q Rev. 2.2 May 06 ...