IHW30N120R Infineon Technologies, IHW30N120R Datasheet - Page 9
IHW30N120R
Manufacturer Part Number
IHW30N120R
Description
IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
Manufacturer
Infineon Technologies
Datasheet
1.IHW30N120R.pdf
(12 pages)
Specifications of IHW30N120R
Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
30A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-40C
Operating Temperature (max)
175C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
30 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Compliant
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
IHW30N120R
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INFINEON
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Power Semiconductors
20A
10A
0A
Figure 21. Typical diode forward current as
a function of forward voltage
0V
V
F
,
FORWARD VOLTAGE
T
J
=25°C
175°C
1V
Soft Switching Series
9
1.5V
1.0V
0.5V
0.0V
Figure 22. Typical diode forward voltage
as a function of junction temperature
I
F
=20A
-50°C
10A
7.5A
T
J
,
JUNCTION TEMPERATURE
0°C
IHW30N120R
50°C
Rev. 2.2
100°C
150°C
May 06
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