IHW30N120R Infineon Technologies, IHW30N120R Datasheet - Page 6

• Manufacturer Part Number: IHW30N120R
• Description: IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
• Manufacturer: Infineon Technologies

Specifications of IHW30N120R

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 30A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Compliant

Power Semiconductors
Figure 9. Typical switching times as a
100ns
Figure 11. Typical switching times as a
100ns
1µs
10ns
1µs
0°C
t
t
d(on)
0A
f
t
d(off)
t
t
d(on)
t
d(off)
f
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
t
r
J
I
CE
GE
,
10A
C
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
50°C
20A
t
r
C
GE
=30A, R
=0/15V, R
30A
100°C
J
CE
=175°C,
=600V,
G
=34Ω,
40A
G
=34Ω,
150°C
50A
Soft Switching Series
6
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
6V
5V
4V
3V
2V
100ns
-50°C
1µs
t
f
t
d(off)
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
( I
T
C
CE
J
0°C
,
= 0.7mA)
=600V, V
JUNCTION TEMPERATURE
R
t
d(on)
G
,
GATE RESISTOR
IHW30N120R
50°C
GE
=0/15V, I
J
=175°C,
100°C
Rev. 2.2
C
=30A,
150°C
May 06
max.
typ.
min.
t
r
q