IHW30N120R Infineon Technologies, IHW30N120R Datasheet - Page 11
IHW30N120R
Manufacturer Part Number
IHW30N120R
Description
IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
Manufacturer
Infineon Technologies
Datasheet
1.IHW30N120R.pdf
(12 pages)
Specifications of IHW30N120R
Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
30A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-40C
Operating Temperature (max)
175C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
30 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IHW30N120R
Manufacturer:
INFINEON
Quantity:
5 500
Company:
Part Number:
IHW30N120R
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Part Number:
IHW30N120R2
Manufacturer:
INF
Quantity:
20
Company:
Part Number:
IHW30N120R2
Manufacturer:
INFINEON
Quantity:
1 000
Company:
Part Number:
IHW30N120R3
Manufacturer:
INFINEON
Quantity:
12 500
Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
Soft Switching Series
11
i,v
p(t)
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
r
1
di /dt
1
r
F
I
1
r r m
IHW30N120R
r
2
2
r
t
2
S
Q
Q =Q
t =t
r r
S
r r
Rev. 2.2
t
r r
S
Q
S
+
90% I
F
+
t
F
Q
t
F
=180nH
=39pF.
F
r r m
r
di
10% I
n
n
r r
r
n
/dt
May 06
r r m
V
T
t
R
C
q