IHW30N120R Infineon Technologies, IHW30N120R Datasheet - Page 4

• Manufacturer Part Number: IHW30N120R
• Description: IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
• Manufacturer: Infineon Technologies

Specifications of IHW30N120R

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 30A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Compliant

Power Semiconductors
100A
Figure 1. Collector current as a function of
Figure 3. Power dissipation as a function of
80A
60A
40A
20A
350W
300W
250W
200W
150W
100W
0A
50W
0W
10Hz
25°C
switching frequency for hard
switching (turn-off)
(T
V
case temperature
(T
f,
100Hz
GE
50°C
T
j
j
SWITCHING FREQUENCY
C
= 0/+15V, R
,
175 C, D = 0.5, V
175 C)
CASE TEMPERATURE
I
75°C
c
1kHz
T
C
=80°C
T
100°C
C
G
=110°C
= 34 )
10kHz
125°C
CE
= 600V,
100kHz
150°C
Soft Switching Series
4
Figure 2. IGBT Safe operating area
Figure 4. DC Collector current as a function
50A
40A
30A
20A
10A
10A
0A
1A
25°C
1V
V
CE
(D = 0, T
T
of case temperature
(V
,
50°C
j
COLLECTOR
T
GE
175 C;V
C
10V
,
CASE TEMPERATURE
15V, T
75°C
C
IHW30N120R
= 25 C,
GE
-
EMITTER VOLTAGE
j
=15V)
100°C 125°C 150°C
100V
175 C)
Rev. 2.2
1000V
t
200µs
1ms
DC
10ms
p
=1µs
50µs
20µs
May 06
q