IHW30N120R Infineon Technologies, IHW30N120R Datasheet - Page 12

• Manufacturer Part Number: IHW30N120R
• Description: IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
• Manufacturer: Infineon Technologies

Specifications of IHW30N120R

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 30A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Compliant

IHW30N120R
q
Soft Switching Series
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/3/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
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Power Semiconductors
12
Rev. 2.2
May 06