IHW30N120R Infineon Technologies, IHW30N120R Datasheet - Page 8
IHW30N120R
Manufacturer Part Number
IHW30N120R
Description
IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
Manufacturer
Infineon Technologies
Datasheet
1.IHW30N120R.pdf
(12 pages)
Specifications of IHW30N120R
Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
30A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-40C
Operating Temperature (max)
175C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
30 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IHW30N120R
Manufacturer:
INFINEON
Quantity:
5 500
Company:
Part Number:
IHW30N120R
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Part Number:
IHW30N120R2
Manufacturer:
INF
Quantity:
20
Company:
Part Number:
IHW30N120R2
Manufacturer:
INFINEON
Quantity:
1 000
Company:
Part Number:
IHW30N120R3
Manufacturer:
INFINEON
Quantity:
12 500
Power Semiconductors
Figure 17. Typical gate charge
10V
10
10
5V
0V
Figure 19. IGBT transient thermal
resistance
( D = t
-1
-2
0nC
K/W
K/W
10µs
p
/ T )
D=0.5
50nC
( I
0.1
0.2
C
=30 A)
100µs
Q
t
GE
single pulse
P
0.01
,
100nC
,
0.02
PULSE WIDTH
GATE CHARGE
0.05
1ms
240V
R
150nC
0.1746
0.118
0.0855
R , ( K / W )
1
C
1
=
10ms
1
/R
200nC
1
960V
C
2.98*10
3.2*10
3.15*10
2
100ms
=
, ( s )
2
Soft Switching Series
/R
250nC
-3
R
2
-2
-4
2
8
Figure 18. Typical capacitance as a function
100pF
10pF
10
10
Figure 20. Typical Diode transient thermal
impedance as a function of pulse width
( D = t
1nF
-1
-2
K/W
K/W
0V
P
/ T )
V
1µs
CE
D=0.5
0.2
0.1
of collector-emitter voltage
( V
,
COLLECTOR
GE
10µs
=0V, f = 1 MHz)
t
single pulse
P
0.01
,
10V
PULSE WIDTH
0.02
100µs
IHW30N120R
0.05
-
EMITTER VOLTAGE
R
0.1221
0.1241
0.0977
0.0248
R , ( K / W )
1
1ms
C
1
=
1
Rev. 2.2
/R
20V
10ms 100ms
1
C
6.16*10
6.91*10
5.43*10
3.12*10
2
=
, ( s )
2
/R
R
2
May 06
-2
-3
-4
-5
2
C
C
C
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