IHW30N120R Infineon Technologies, IHW30N120R Datasheet - Page 10
IHW30N120R
Manufacturer Part Number
IHW30N120R
Description
IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
Manufacturer
Infineon Technologies
Datasheet
1.IHW30N120R.pdf
(12 pages)
Specifications of IHW30N120R
Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
30A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-40C
Operating Temperature (max)
175C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
30 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IHW30N120R
Manufacturer:
INFINEON
Quantity:
5 500
Company:
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IHW30N120R
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Part Number:
IHW30N120R2
Manufacturer:
INF
Quantity:
20
Company:
Part Number:
IHW30N120R2
Manufacturer:
INFINEON
Quantity:
1 000
Company:
Part Number:
IHW30N120R3
Manufacturer:
INFINEON
Quantity:
12 500
IHW30N120R
q
Soft Switching Series
PG-TO247-3-21
Power Semiconductors
10
Rev. 2.2
May 06