ST7FOXK1 STMicroelectronics, ST7FOXK1 Datasheet - Page 201

• Manufacturer Part Number: ST7FOXK1
• Description: Low cost flash 8bit micro
• Manufacturer: STMicroelectronics

Specifications of ST7FOXK1

• 4 To 8 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection In-circuit Programming And In-application Programming (icp And Iap) Endurance: 1K write/erase cycles guaranteed Data retention
• Clock Sources: Internal trimmable 8 MHz RC oscillator, auto wakeup internal low power - low frequency oscillator, crystal/ceramic resonator or external clock
• Five Power Saving Modes: Halt, Active-Halt, Auto Wakeup from Halt, Wait and Slow
• A/d Converter: up to 10 input channels

ST7FOXF1, ST7FOXK1, ST7FOXK2
12.8
12.8.1
EMC (electromagnetic compatibility) characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling two LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Table 83.
Symbol
V
V
FESD
FFTB
ESD: Electrostatic Discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
conforms with the IEC 1000-4-4 standard.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
–
–
–
Prequalification trials
Most of the common failures (unexpected reset and Program Counter corruption) can
be reproduced by manually forcing a low state on the RESET pin or the Oscillator pins
for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can
be hardened to prevent unrecoverable errors occurring (see application note AN1015).
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test
Corrupted Program Counter
Unexpected reset
Critical Data corruption (control registers...)
Voltage limits to be applied on any I/O pin
applied through 100pF on V
Fast transient voltage burst limits to be
pins to induce a functional disturbance
EMS test results
to induce a functional disturbance
Parameter
DD
and V
SS
V
V
DD
DD
conforms to IEC 1000-4-2
conforms to IEC 1000-4-4
=5 V, T
=5 V, T
A
A
Conditions
=+25 °C, f
=+25 °C, f
Electrical characteristics
OSC
OSC
=8 MHz
=8 MHz
DD
201/226
and
Level/
Class
2B
3B