ST7FOXK1 STMicroelectronics, ST7FOXK1 Datasheet - Page 210

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ST7FOXK1

Manufacturer Part Number
ST7FOXK1
Description
Low cost flash 8bit micro
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST7FOXK1

4 To 8 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection In-circuit Programming And In-application Programming (icp And Iap) Endurance
1K write/erase cycles guaranteed Data retention
Clock Sources
Internal trimmable 8 MHz RC oscillator, auto wakeup internal low power - low frequency oscillator, crystal/ceramic resonator or external clock
Five Power Saving Modes
Halt, Active-Halt, Auto Wakeup from Halt, Wait and Slow
A/d Converter
up to 10 input channels

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Electrical characteristics
210/226
Table 91.
1. Data based on characterization results over the whole temperature range.
Figure 92. ADC accuracy characteristics
Symbol
(1)
1023
1022
1021
|E
|E
|E
|E
|E
7
6
5
4
3
2
1
O
G
T
D
L
0
|
|
V
|
|
|
SS
1
E
1LSB
O
ADC accuracy with V
Digital Result
2
Differential linearity error
IDEAL
Total unadjusted error
Integral linearity error
3
=
Offset error
Parameter
V
------------------------------- -
Gain Error
4
DD
1024
5
V
1 LSB
SS
E
6
T
IDEAL
E
7
L
(2)
DD
E
= 4.5 to 5.5 V
D
1021 1022 1023 1024
(3)
f
ADC
f
Conditions
(1)
CPU
=4 MHz
E
=8 MHz,
G
V
DD
ST7FOXF1, ST7FOXK1, ST7FOXK2
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer
curves.
EO=Offset Error: deviation between the first
actual transition and the first ideal one.
EG=Gain Error: deviation between the last
ideal transition and the last actual one.
ED=Differential Linearity Error: maximum
deviation between actual steps and the ideal
one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
(1)
V
Typ
2.0
0.9
1.0
1.2
1.1
in
(LSB
IDEAL
Max
5.0
2.5
1.5
3.5
4.5
)
Unit
LSB

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