mcf5274l Freescale Semiconductor, Inc, mcf5274l Datasheet - Page 49

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mcf5274l

Manufacturer Part Number
mcf5274l
Description
Mcf5275 Integrated Microprocessor Family Hardware
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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10.3 ESD Protection
Freescale Semiconductor
4
5
The average chip-junction temperature (T
Where:
For most applications P
neglected) is:
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring P
equilibrium) for a known T
and (2) iteratively for any value of T
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL
SPEC-883 Method 1012.1).
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter
is written in conformance with Psi-JT.
T
4
P
P
P
NOTES:
1
A
D
INT
I/O
JMA
Characteristics
ESD Target for Human Body Model
ESD Target for Machine Model
HBM Circuit Description
MM Circuit Description
Number of pulses per pin (HBM)
positive pulses
negative pulses
Number of pulses per pin (MM)
positive pulses
negative pulses
Interval of Pulses
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
MCF5275 Integrated Microprocessor Family Hardware Specification, Rev. 1.1
= Ambient Temperature, qC
= Package Thermal Resistance, Junction-to-Ambient, qC/W
= P
= I
= Power Dissipation on Input and Output Pins — User Determined
I/O
DD
K = P
INT
A
 P
. Using this value of K, the values of P
u V
P
INT
D
DD
Table 45. ESD Protection Characteristics
I/O
u (T
, Watts - Chip Internal Power
and can be ignored. An approximate relationship between P
A
A
.
+ 273 qC) + 4
P
T
D
J
J
) in qC can be obtained from:
=
=
K
T
A
y
+
T
Preliminary
P
J
JMA
+
D
u
273qC
Symbol
R
R
u P
4
HBM
MM
series
series
JMA
C
C
D
2
D
(1)
(2)
(3)
and T
J
Value
can be obtained by solving equations (1)
2000
1500
200
100
200
0
1
1
3
3
1
1, 2
Preliminary Electrical Characteristics
Units
ohms
ohms
sec
pF
pF
V
V
D
and T
J
(if P
I/O
D
is
(at
49

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