SPEAR-09-H022_06 STMICROELECTRONICS [STMicroelectronics], SPEAR-09-H022_06 Datasheet - Page 68

• Manufacturer Part Number: SPEAR-09-H022_06
• Description: SPEAr Head200 ARM 926, 200K customizable eASIC gates, large IP portfolio SoC
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
25.2.2.2
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Table 20.
LVCMOS/SSTL I/O
If the I/Os are set as LVCMOS (for SDRAM memories), the DC electrical characteristics are
the following:
Table 21.
Table 22.
Instead when they are set as (for DDR memories), refer to following tables:
Table 23.
Table 24.
Symbol
Symbol
Symbol
Symbol
Symbol
Vswing
Rup
Rpd
Ipu
Ipd
Vih
Voh
Vin
Vol
Vih
Vil
Iin
Vil
Pull-up current
Pull-down current
Equivalent Pull-up resistance
Equivalent Pull-down resistance Vi = VDD
Low level input voltage
High level input voltage
Input Current
DC differential input voltage
Low level input voltage
High level input voltage
DC input signal voltage
LVCMOS DC input specification (3 < VDD < 3.6)
Low level output
voltage
High level output
voltage
DC input specification of bidirectional SSTL pins (2.3 < VDD DDR < 2.7)
Pull-up and Pull-down characteristics
LVCMOS DC output specification (3 < VDD < 3.6)
DC input specification of bidirectional differential SSTL pins
(2.3 < VDD DDR < 2.7)
Parameter
Parameter
Parameter
Parameter
Parameter
Vout ≥ Voh (min)
or Vout ≤ Vol (max)
Vin = 0 or Vin =VDD
VDD = min, Iol = 100 µA
VDD = min, Ioh = -100 µA
Test Condition
SSTL_VREF + 0.15
Test Condition
Vi = 0 V
Vi = 0 V
Vi = VDD
Test Condition
Min.
-0.3
Min.
0.36
-0.3
SSTL_VREF – 0.15
VDD DDR – 0.15
Min.
VDD - 0.2
VDD DDR + 0.3
VDD DDR + 0.6
40
30
32
27
Min.
-0.3
Min.
2
Max.
Max.
Typ.
60
60
50
50
VDD+0.3
Max.
Max.
0.8
±5
SPEAR-09-H022
0.2
Max.
110
133
100
75
Unit
Unit
Unit
Unit
V
V
V
V
KOhm
KOhm
µA
Unit
V
V
V
V
µA
µA