S71WS256NC0BAWE32 SPANSION [SPANSION], S71WS256NC0BAWE32 Datasheet - Page 73
S71WS256NC0BAWE32
Manufacturer Part Number
S71WS256NC0BAWE32
Description
Stacked Multi-Chip Product (MCP)
Manufacturer
SPANSION [SPANSION]
Datasheet
1.S71WS256NC0BAWE32.pdf
(188 pages)
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14.7
September 15, 2005 S71WS-N_01_A4
DC Characteristics (CMOS Compatible)
Notes:
1. Maximum I
2. CE# must be set high when measuring the RDY pin.
3. The I
4. I
5. Device enters automatic sleep mode when addresses are stable for t
6. V
7. Total current during accelerated programming is the sum of V
8. V
9. The content in this document is Advance information for the S29WS128N. Content in this document is
Parameter
current is equal to I
Preliminary for the S29W256N.
V
CC
I
I
I
I
I
I
I
I
V
V
V
IH
ACC
V
I
V
I
CCB
CC1
CC2
CC3
CC4
CC5
CC6
ACC
LKO
LO
OH
HH
LI
OL
IH
IL
active while Embedded Erase or Embedded Program is in progress.
= V
CC
= V
CC
current listed is typically less than 3.5 mA/MHz, with OE# at V
A d v a n c e
HH
Input Load Current
Output Leakage Current (2)
V
V
Read Current (3)
V
V
V
V
(Read While Write) (6)
V
Accelerated Program Current
(7)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Voltage for Accelerated
Program
Low V
± 0.2 V and V
CC
CC
CC
CC
CC
CC
CC
CC
on ACC input.
Active burst Read Current
Active Asynchronous
Active Write Current (4)
Standby Current (5, 6)
Reset Current (6)
Active Current
Sleep Current (6)
specifications are tested with V
Description (Notes)
CC
Lock-out Voltage
CC3
.
IL
> –0.1 V.
I n f o r m a t i o n
S71WS-Nx0 Based MCPs
V
V
CE# = V
WE# = V
= 8
CE# = V
WE# = V
= 16
CE# = V
WE# = V
= 32
CE# = V
WE# = V
= Continuous
CE# = V
WE# = V
CE# = V
ACC = V
CE# = RESET# =
V
RESET# = V
CE# = V
5 MHz
CE# = V
CE# = V
V
V
V
I
I
OL
OH
IN
OUT
CC
ACC
CC
CC
= 100 µA, V
= V
= –100 µA, V
± 0.2 V
= 1.8 V
= 1.8 V
Test Conditions (Notes 1, 8)
= V
= 9.5 V
SS
IL
IH
CC
IL
IL
IL
IL
IL
IL
IL
IL
SS
IH
IH
IH
IH
IH
, OE# = V
to V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, burst length
, burst length
, burst length
, burst length
to V
= V
IL,
CC
CLK = V
CC
CC
CC
, V
CC
, V
= V
max.
CC
IH
= V
IH
IH
IH
IH
IH
IH
IH
IH,
CC
, ACC = V
= V
,
,
,
,
,
,
CC min
IL
CC min
= V
CC
CC
54 MHz
66 MHz
80 MHz
54 MHz
66 MHz
80 MHz
54 MHz
66 MHz
80 MHz
54 MHz
66 MHz
80 MHz
10 MHz
max
5 MHz
1 MHz
ACC
V
V
V
= V
V
V
V
max
= V
ACC
ACC
ACC
CC
CC
CC
IH
CC
and V
CC
@
ACC
V
IH
CC
CC
.
+ 20 ns. Typical sleep mode
–0.5
Min
V
8.5
– 0.4
CC
currents.
Typ
27
28
30
28
30
32
29
32
34
32
35
38
34
17
24
20
70
50
14
4
1
1
2
6
V
CC
52.5
Max
250
0.4
0.1
9.5
1.4
±1
±1
54
60
66
48
54
60
42
48
54
36
42
48
45
26
70
60
70
20
20
7
5
5
+ 0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
71
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