W25Q32BVSSIG Winbond Electronics, W25Q32BVSSIG Datasheet - Page 46

• Manufacturer Part Number: W25Q32BVSSIG
• Description: IC SPI FLASH 32MBIT 8SOIC
• Manufacturer: Winbond Electronics

Specifications of W25Q32BVSSIG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4M x 8)
• Speed: 104MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7.2.26 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of t
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY
bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept
other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is protected by
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory Protection
table).
(IO
(IO
CLK
/CS
DO
DI
0
1
)
)
Mode 3
Mode 0
Figure 24. Chip Erase Instruction Sequence Diagram
CE
(See AC Characteristics). While the Chip Erase cycle is in progress,
0
1
Instruction (C7h/60h)
High Impedance
2
- 46 -
3
4
5
6
7
Mode 3
Mode 0
W25Q32BV