M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 11

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M58BW016FB7T3T

Manufacturer Part Number
M58BW016FB7T3T
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016FB7T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016FB7T3TCT
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
1.1
Figure 3.
Block protection
The M58BW016 feature two different levels of block protection.
After a device reset the first two kinds of block protection (WP, RP) can be combined to give
a flexible block protection.
C
D
G
H
A
B
E
F
J
I
Write protect pin, WP - When WP is Low, V
upper (top) or lower (bottom)) and all the main blocks are protected. When WP is High
(V
Reset/power-down pin, RP - If the device is held in reset mode (RP at V
program or erase operations can be performed on any block.
IH
) all the lockable parameter blocks and all the main blocks are unprotected
V DDQ
V SSQ
V DDQ
V DDQIN
DQ13
DQ15
DQ3
A15
A16
A17
LBGA connections (top view through package)
1
DQ12
DQ14
DQ0
DQ4
DQ7
DQ8
A14
A13
A18
RP
2
DQ10
DQ11
V DD
DQ2
DQ6
A12
A11
NC
K
3
L
DQ1
DQ5
DQ9
V PP
V SS
A10
WP
NC
A9
B
4
DQ27
DQ22
DQ17
V DD
V SS
IL
NC
NC
NC
A8
E
5
, all the lockable parameter blocks (two
DQ31
DQ28
DQ25
DQ21
DQ19
A6
A5
A7
W
G
6
DQ30
DQ26
DQ24
DQ23
DQ18
NC
GD
A3
A4
R
7
V DDQ
V DDQ
V SSQ
DQ29
DQ20
DQ16
NC
IL
A2
A1
A0
8
Description
), no
AI04151C
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