M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 54
M58BW016FB7T3T
Manufacturer Part Number
M58BW016FB7T3T
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet
1.M58BW016DB7T3TNX.pdf
(70 pages)
Specifications of M58BW016FB7T3T
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016FB7T3TCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M58BW016FB7T3T
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Package mechanical
54/70
Figure 21. LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package outline
1. Drawing is not to scale.
Table 24.
Symbol
ddd
SD
A1
A2
D1
E1
FD
FE
SE
A
D
E
b
e
E
LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package
mechanical data
E1
FE
10.00
12.00
0.60
7.00
9.00
1.50
1.50
Typ
BALL "A1"
FD
A
millimeters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
e
0.40
1.00
0.50
0.50
Min
–
–
–
–
–
–
SD
D1
D
Max
1.60
0.15
1.05
–
–
–
–
–
–
b
SE
e
A1
0.024
0.394
0.276
0.472
0.354
0.059
0.059
Typ
A2
inches
0.016
0.039
0.020
0.020
Min
–
–
–
–
–
–
JE_ME
ddd
0.063
0.041
0.006
Max
–
–
–
–
–
–